| Summary: | 碩士 === 國立交通大學 === 電信工程研究所 === 102 === This thesis focuses on the application of wireless communication network, using the TSMC 0.18um CMOS process designs to achieve the RF circuits. It is divided into two parts. The first part is active filter and its application to 5GHz channel select receiver. The second part is the characteristic measurement of RF device. The RF components contain Schottky diode and two kinds of bipolar transistors─SiGe HBT and CMOS Vertical-npn BJT.
In the chapter 2, we discuss the design method of high sideband rejection bandpass filter and the technique of Q-enhancement. Then, we discuss mixed-mode S parameter and noise calibration related to differential I/O circuit.
In the chapter 3, we implement the 5GHz direct conversion receiver using tunable active filter for channel select.
In the chapter 4, we focus on the key components of RF circuits─Schottky diode. We implement and measure the diode testkey and the combination of different mask forms anti-parallel diode pair. Finally, we measure the DC characteristics of SiGe 0.18um HBT and CMOS parasitic Vertical-npn.
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