A Novel Wide Band Low Noise Amplifier using Negative Resistance Input Matching for LTE Applications
碩士 === 國立交通大學 === 電信工程研究所 === 102 === In this thesis, a novel wide band low noise amplifier combined negative resistance with common gate structure for LTE applications are presented. The research focused on how to reduce the power consumption and noise figure, and using negative resistance to achie...
Main Authors: | Lin, Ming-Dao, 林明道 |
---|---|
Other Authors: | Tarng, Jenn-Hwan |
Format: | Others |
Language: | zh-TW |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/15789984303620588983 |
Similar Items
-
Design of Wide-band Low Noise Amplifiers
by: Wei-Chen Lo, et al.
Published: (2009) -
Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications
by: Ching-Han Tsai, et al.
Published: (2021-02-01) -
Design of Image-Reject CMOS Low-Noise Amplifiers with Novel Input-Matching Techniques
by: Ming-Chang Sun, et al.
Published: (2005) -
Design and Implementation of Ultra-Wide Band Low Noise Amplifier
by: Chih-Ming Pai, et al.
Published: (2008) -
Study of Low Noise Amplifier for Ultra Wide Band Receiver
by: Ming-Wei Hsieh, et al.
Published: (2008)