| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 102 === In VCSEL, the laser resonator consists of two distributed Bragg reflector (DBR) mirrors parallel to the wafer surface with an active region bounded by oxide layers. Current and photons are confined in active region. The cavity can be regarded as quasi two-dimensional structure, and the transverse boundary is determined by oxide confinement. The sub-threshold luminescence can have clear structure because of the amplified spontaneous emission and the interaction between light and cavity. We measure spectrum and analysis the information of transverse part, which is a sequence impulse function with limited numbers. The Fourier-transform result of this function is a length spectrum in which the characteristic lengths correspond to different periodic orbits of 2D boundary. The morphology of spectrum can be obviously affected by operating conditions and boundary. So we want to discuss the influence factors on sub-threshold luminescence emitted from VCSELs, ex: cavity size, frequency detuning, current distribution.
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