Band structure effect of p-type single crystal germanium nanowires transport with strain
碩士 === 國立交通大學 === 電子物理系所 === 102 === In this thesis, we consider p-type nanowires that is fabricated by high-mobility germanium material. We explore the quantum transport along the [100] and [110] channel directions using k•p fourband model to calculate band structure. We apply uniaxial strain alon...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71202727525751165277 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 102 === In this thesis, we consider p-type nanowires that is fabricated by high-mobility germanium material. We explore the quantum transport along the [100] and [110] channel directions using k•p fourband model to calculate band structure. We apply uniaxial strain along the nanowires channel direction to change the hole band structure. The band structure caculation allows us to investigate how the hole conductance affected by the strain and temperature effects. We have analyzed our results both analytically and numerically that should be applicable for the development of the nanowire based field effect transistor.
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