Electrical-transport properties of micrometer-sized CoSi2/normal-metal interfaces

• Main Authors: Lai, Wen-Long, 賴文隆
• Other Authors: Lin, Juhn-Jong
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/3qr3rb

碩士 === 國立交通大學 === 電子物理系所 === 102 === Cobalt silicide has its own importance not only in industry but also in the basic of scientific investigation. In this paper, we have produced two different pattern of cobalt silicide film, and deposited metal on the film, measured electrical-transport properties of micrometer-sized cobalt silicide/normal-metal interfaces. By low temperature measurement system to measure the resistance from room temperature to 1.5 K with the change of temperature, the two samples showed different electron transport properties, an electron transport presents the results of the metallic, and the other is the characteristics of the insulator. Mean that decrease with temperature, the resistance increased exponentially. Because we have measure the resistance of cobalt silicide with the change of temperature, you can know that this film presents the results of metallic, so the first type of sample, We know it present more clean interface, however, the other type of sample result, the resistance increases with decreasing temperature, we can use FITC to describe the transmission properties of the samples, we assume that the result of its high potential barrier because when the silicide cobalt in the air will oxidize, and roughness of cobalt silicide surface, it is easy to form lots of tunnel interfaces, thus decreasing temperature, the thermal fluctuation induced tunneling became a major electrical measurements contribution.