A Study on Polycrystalline-Silicon Nanowire Tunnel Thin-Film Transistor with Raised Source/Drain
碩士 === 國立交通大學 === 電子物理系所 === 102 === It has been known that tunnel field-effect transistors (TFETs) exhibit higher on/off current ratio, steep subthreshold swing, and ultralow off leakage current than conventional MOSFETs. In this study, we propose a tunnel TFT fabricated with nanowire structure and...
Main Authors: | Fong, Po-Wei, 方柏崴 |
---|---|
Other Authors: | Chao, Tien-Sheng |
Format: | Others |
Language: | en_US |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/02898597018228468748 |
Similar Items
-
Study of Selective Tungsten Raised-Source/Drain Polycrystalline Silicon Thin Film Transistors
by: Po-Yi Kuo, et al.
Published: (2002) -
Effect of Plasma Surface Treatment on Polycrystalline-Silicon Tunnel Thin-Film Transistor
by: Hsu, Po-Yang, et al.
Published: (2015) -
Suppression of Carrier Recombination Effect on the Polycrystalline-Silicon Tunnel Thin-Film Transistor with Gate-Drain Underlapping by the NH3 Plasma Passivation Method
by: Chih-Cheng Fang, et al.
Published: (2018) -
Study of Drain Engineering in Polycrystalline Silicon Thin-Film-Transistors (Poly-Si TFT)
by: Yi-Ming Chiu, et al.
Published: (2005) -
Multiple Nanowire Channel Polycrystalline Silicon Thin Film Transistor for RF Applications
by: Sin-ping Huang, et al.
Published: (2014)