A Study on Polycrystalline-Silicon Nanowire Tunnel Thin-Film Transistor with Raised Source/Drain

碩士 === 國立交通大學 === 電子物理系所 === 102 === It has been known that tunnel field-effect transistors (TFETs) exhibit higher on/off current ratio, steep subthreshold swing, and ultralow off leakage current than conventional MOSFETs. In this study, we propose a tunnel TFT fabricated with nanowire structure and...

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Bibliographic Details
Main Authors: Fong, Po-Wei, 方柏崴
Other Authors: Chao, Tien-Sheng
Format: Others
Language:en_US
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/02898597018228468748