Investigation of bipolar and self-compliance characteristics in ZrO2-based RRAM structure with WO3 layer
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this thesis, the bipolar and self-compliance resistive switching characteristics are investigated in the structure of ZrO2-based resistive random access memory (RRAM) with different thickness of WO3 layer. The first section is the Pt/Ti/WO3/ZrO2/W struct...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/p9937v |