利用源極與汲極工程改善鍺通道金氧半場效電晶體之特性
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this thesis, we firstly fabricated Al2O3/GeO2/Ge MOS capacitors. Al2O3 was deposited by atomic layer deposition (ALD), while GeO2 was formed by rapid thermal oxidation (RTO). The effect of forming gas annealing (FGA) at 300 °C for 30 min on MOS capacitor...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/zw25ra |