The Investigation of GeO Capping layer on TiO2 Based and PZT Based Resistive Random-Access Memory
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === With the arrival of Digital Mobile Life, the demands for nonvolatile memory (NVM) have significantly increased, such as mobile phones, digital cameras and portable devices. NVM technology has been developed to obtain high speed, high density and low power c...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01913161129551921833 |