| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Wafer bonding technique is one of the key technologies in 3D-IC applications. In this research, we develop the hybrid Cu/In to polymer/oxide low temperature bonding on heterogeneous substrates
integration and propose a novel concept of 3D LED integration. The main reason for low temperature bonding is to meet the requirement of low thermal budget and mitigate the CTE mismatch problem in heterogeneous substrate bonding. Cu/In interconnects can be bonded at low temperature with the great bonding quality and exhibit excellent electrical performance, which have already been well-studied.
In addition, polymer to oxide bonding at low temperature is investigated followed by grinding
and high temperature annealing tests to examine the bonding strength and thermal stability . In order to obtain the simultaneous bonding between Cu/In and
polymer/oxide, the thickness control of metal and polymer is extremely important. Therefore, all the experimental parameters in the fabrication process flow must be optimized properly. Finally, we combine these two bonding techniques to realize the hybrid bonding on Si/Si and Si/sapphire substrates, which can be applied to 3D LED or other heterogeneous substrate integrations.
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