Probing long-range Coulomb interactions in nanoscale MOSFETs

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Electron mobility degradation is currently frequently encountered in highly scaled devices. This means that additional scattering mechanisms exist and will become profoundly important in the next-generation of devices. We have recently experimentally probed...

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Bibliographic Details
Main Authors: Wei, Sih-Yun, 魏思勻
Other Authors: Chen, Ming-Jer
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/21372155625778236236

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