Probing long-range Coulomb interactions in nanoscale MOSFETs
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Electron mobility degradation is currently frequently encountered in highly scaled devices. This means that additional scattering mechanisms exist and will become profoundly important in the next-generation of devices. We have recently experimentally probed...
Main Authors: | Wei, Sih-Yun, 魏思勻 |
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Other Authors: | Chen, Ming-Jer |
Format: | Others |
Language: | en_US |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/21372155625778236236 |
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