Probing long-range Coulomb interactions in nanoscale MOSFETs

• Main Authors: Wei, Sih-Yun, 魏思勻
• Other Authors: Chen, Ming-Jer
• Format: Others
• Language: en_US
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/21372155625778236236

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Electron mobility degradation is currently frequently encountered in highly scaled devices. This means that additional scattering mechanisms exist and will become profoundly important in the next-generation of devices. We have recently experimentally probed long-range Coulomb interactions due to plasmons in polysilicon gate of long-channel (1 m) MOSFETs. In this paper, we further probe those due to plasmons in the highly-doped source and drain. Test vehicles include four more samples from the same manufacturing process but with small channel lengths (down to 33 nm). I-V’s of devices are measured at two drain voltages of 0.05 and 1 V, in a temperature range of 292 to 380 K. Inverse modeling technique is applied to furnish calibrated doping profiles. The inversion-layer electron effective mobility is thereby extracted, showing a decreasing trend with decreasing channel length. Such differences reflect more additional scatterers in the shorter devices. Mobility components limited by these additional scatterers are assessed using Matthiessen’s rule. Extracted temperature dependencies reveal that the strength of source/drain plasmons increases with decreasing channel length. Corroborative evidence is given as well.