| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this study, deeply dry-etched Bragg reflectors were fabricated and substituted for cleaved mirrors of conventional edge-emitting semiconductor lasers. The reduction of the laser size was achieved. We also integrated the deeply dry-etched Bragg reflectors with passively Q-switching semiconductor lasers, which will be helpful for the integration with other optical or electronic devices. The shortest cavity length in our experiment results is 50um, and the lowest threshold current is 4.7mA while cavity length is 150um. The reflectivity of the DBR is about 58%, higher than the cleaved mirror which is 32%.And the frequency tuning range of Q-switching laser is about 157MHz to 2.37GHz, laser peak power is 7.49mW, and the pulse width is about 110ps.
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