A study of resistive memory device containing HfO2 thin film
碩士 === 國立交通大學 === 材料科學與工程學系所 === 102 === Resistive random access memory (RRAM) has been widely recognized as the next-generation nonvolatile memory to replace conventional flash memory. This study investigates the resistive switching properties of RRAM containing aluminum (Al) as the top electrode,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/v8zugb |