The Growth of AlGaN/GaN Heterostructures on SiC Substrate by MOCVD for High Electron Mobility Transistor Applications
碩士 === 國立交通大學 === 材料科學與工程學系所 === 102 === In this study, AlGaN/GaN HEMT structures were grown on semi-insulating SiC substrates by using metal organic chemical vapor deposition (MOCVD) method. In the first part, the study is focused on growing the device structure for AlGaN/GaN HEMT on SiC substrate...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9ukznq |