| Summary: | 碩士 === 國立交通大學 === 材料科學與工程學系所 === 102 === Among variety of 1-D materials, ZnO nanowires (NWs) has attracted extensive attention due to its specific physical properties. For wide-ranging applications in nanoscale electronic devices, durable and reproducible p-type ZnO is essential. In this work, pure ZnO NWs were synthesized via the hydrothermal method which used zinc acetate and HMTA mixed solution as the precursor; Additionally, P2O5 was served as a dopant source to obtain p-type ZnO NWs. Simple p-n homojunction device could be grown by two-step synthesis through different solution mentioned above. The morphology of ZnO NWs arrays were examined by field emission scanning electron microscope (FESEM). The high resolution transmission electron microscope (HRTEM) image indicated that the single ZnO NW p-n homojunction is single-crystalline with <001> growth direction. The distribution of P element was analyzed by Energy Dispersive Spectrometer (EDS). In addition, the dynamic growth of ZnO nano particle via hydrothermal method was observed in in-situ TEM. Moreover, the results of temperature-dependent photoluminescence (PL) spectra revealed that both phosphorus-doped and pure ZnO NWs showed a UV light emission (370–380 nm) and a defect-related emission (400–750 nm). It's remarkable that two extra peaks located at 416 nm & 435 nm were discovered from ZnO NW p-n homojunction resulting from donor-acceptor recombination. The electron transport properties and field effect transistors (FETs) of the single phosphorus-doped ZnO NW confirmed p-type conductivity with low resistivity (0.0132 Ω.cm). The single ZnO NW p-n homojunction demonstrated rectification characteristics.
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