| Summary: | 碩士 === 國立交通大學 === 光電工程研究所 === 102 === Solution-processed indium-gallium-zinc-oxide TFTs had been studied for recent years. The most attractive is the low cost fabrication processes, high charge carrier mobility and high optical transparency. However, the performance on solution processed metal-oxide TFTs is not stable, it need high annealing temperature (>400℃) to achieve high performance device characteristics. Recently, some research show that we can decrease the annealing temperature to obtain high performance solution processed metal-oxide TFTs with high ratio In IGZO. And we can also increase excellent environmental stability and high mobility with DUV annealing.
In this study, we fabricated the conventional thin-film transistor with different composition metal-oxide semiconductors such as ZnO, IZO, and IGZO and different Zn precursor to achieve high mobility. In order to decrease annealing temperature , we try to use DUV annealing and post-thermal annealing .We found that IGZO have high performance with DUV annealing and post-thermal annealing.
The IGZO TFT with UV annealing and post-thermal annealing (300˚C) have mobility ～1 cm2V-1s-1 , but IGZO TFTwith thermal annealing (300˚C) have mobility ～0.2 cm2V-1s-1.
|
|---|
