Improvement of External Quantum Efficiency and Efficiency Droop of InGaN-based Green Light-emitting Diodes by Band Structure Engineering
碩士 === 國立交通大學 === 光電工程研究所 === 102 === In this thesis, we want to design the epitaxial structure of InGaN-based green light-emitting diodes (LEDs) to improve the holes transport, electron leakage, and polarization field which could enhance the external quantum efficiency and alleviate the efficiency...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23714443189386723586 |