| Summary: | 博士 === 國立交通大學 === 光電工程研究所 === 102 === This dissertation aims to develop the high performance vertical polymer space-charge-limited transistor (SCLT), high performance dual-gate operated mode (DG mode) amorphous indium gallium zinc oxide semiconductor thin-film transistor (a-IGZO TFT) and the sensitive gas sensor based on the above two transistor-types. Four projects are reported here. In Chapter 3, the geometric design of the SCLT was investigated by adjusting the opening hole diameter, the height of insulator and the aspect ratio. Helping by the simulation, a SCLT with optimize geometric design was fabricated and successful drove white light-emitting-diode (W-OLED). This work collaborated with the French group of prof. Olivier Soppera. Second, in Chapter 4, we integrated the vertical polymer SCLT with gas sensing property. With lower than 1 V operated voltage, the SCLT presented a good sensing response in ammonia gas and the limited sensing concentration down to the 30 ppb, and via the TCAD simulation to discuss the sensing mechanism. Third, extending our previous study in NDD a-IGZO TFT in Chapter 5, we fabricated the double gate NDD a-IGZO TFT and presented high output current under the DG mode. The TCAD simulations provided that the dot-like doping increased the carrier concentration in middle channel of the dual-gate NDD a-IGZO TFT. At final, in Chapter 6, we combined the superiority of organic and inorganic materials to firstly fabricate an organic/inorganic hybrid gas sensor based on thin-film transistor (TFT). By capping an organic sensing layer onto amorphous indium gallium zinc oxide (a-IGZO) TFT, the hybrid gas sensor exhibited the sensing limitation of 100 ppb in ammonia and acetone gas.
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