| Summary: | 碩士 === 國立交通大學 === 光電工程研究所 === 102 === In the past, with the developments and requirements of the photonic circuit, the study of the nanolaser recently become a popular investigated topic. In this thesis, we will discuss GaAs-based nano metallic-cavity design and theorem. In order to be able to successfully produce electrical driven GaAs-based Metallic cavity laser .
In this thesis, we have designed and processed the metal encapsulated nanocavity light emitting diode with electrical injection at room temperature and discussed its characteristic .In the first part, we designed a GaAs nanocavity structure with top metal and bottom DBRs to provide good confinement. We will discussed the DBR issue and surface recombination in different size of cavity. In the second part, we utilized the concept of cut off waveguide, and utilizing the index different between Al0.7Ga0.3As and GaAs to confine the light in the active region. Optimize the epitaxial structure include p-type and n-type thickness. In order to confine light in the active region and we find out the appropriate size by simulation. Then we annealed the silver to optimize cavity quality factor and analysis the loss tern and the flatness. Finally, discuss the measurement result and simulation.
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