Effect of Gate Geometry on Reliability Characteristics of Low-k Dielectrics
碩士 === 國立暨南國際大學 === 電機工程學系 === 103 === This study consists of two parts. The first part study the effects of the metal gate geometry on the reliability characteristics of low-k dielectric films using metal-insulator-semiconductor (MIS) structures have been investigated. Weibull slopes (β), area scal...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14756231475144693166 |