| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 103 === In this thesis, we focus on the study of polycrystalline-silicon thin-film-transistors with bridged-grain channels fabricated using nanoimprint lithography. The grating doping regions in channel were fabricated by ion implantation through the PMMA, patterned with thermal nanoimprint lithography. Then the thin-film-transistors were fabricated by the conventional TFTs process. Finally, the electrical characteristics of proposed TFTs were investigated.
In our results, the bridged-grain poly-Si TFTs with 400/800 nm grating channels structure were fabricated successfully. The proposed poly-Si TFTs show lower threshold voltage, higher ON/OFF ratio, better subthreshold swing, higher field-effective mobility, and higher drain current than that with a conventional channel. This technique will be suitable for the fabrication of high-performance poly-Si TFTs at low cost in the future.
|
|---|
