Design and Modeling of Tunnel Field-Effect Transistors
博士 === 國立暨南國際大學 === 電機工程學系 === 102 === The insurmountable limit of 60 mV/decade subthreshold swing at room temperature in traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) leads to the non-scalability of the threshold voltage and associated power consumption. Based on the gate...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68952443921464853847 |