Millimeter-Wave CMOS Low Insertion-Loss-Variation Phase Shifter and W- / K-band CMOS T/R Switches

• Main Authors: Shih-ChiaoHuang, 黃詩喬
• Other Authors: Huey-Ru Chuang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/nu45mt

碩士 === 國立成功大學 === 電腦與通信工程研究所 === 102 === This thesis presents the design of millimeter-wave (MMW) CMOS low-insertion loss phase shifters and W- / K-band CMOS T/R switches. The K-band phase shifter (PS) is fabricated using standard TSMC 0.18-μm CMOS technology. To achieve full 360° phase control, a (fixed) switch-type 180° phase shifter is applied to the continuous 180° reflection-type phase shifter for the phased-array antenna system. The K- and W-band T/R switches are fabricated using standard TSMC 0.18-μm and 90-nm GUTM CMOS technologies, respectively. The first W-band (75 - 110 GHz) switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity performance. To enhance the isolation performance, the parallel inductor and leaking cancellation technique are adopted. The second W-band series-shunt type switch uses the double parallel-path structure. In addition, the body-floating, parallel inductor and stacked transistor techniques are used to improve the overall performance. In the K-band switch design, the chip size is much reduced by using the stacked inductor. All the measurements are performed by using the on-wafer measurement setup.