Effects of defects on structural, luminescence, and optoelectronic properties of wide bandgap heteroepitaxials

Effects of defects on structural, luminescence, and optoelectronic properties of wide bandgap heteroepitaxials

博士 === 國立成功大學 === 光電科學與工程學系 === 102 === Defects in wide bandgap heteroepitaxials may affect the functionality of their related optoelectronic devices. In this research, the effects of point defects on structural, luminescence, and optoelectronic properties of β-Ga2O3 and Ga doped ZnO (GZO) heteroep...

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Bibliographic Details
Main Authors:	ParvanehRavadgar, 雷哈娜
Other Authors:	Ray-Hua Horng
Format:	Others
Language:	en_US
Published:	2014
Online Access:	http://ndltd.ncl.edu.tw/handle/94521081787476140503

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