Electronic transport properties and characterizations of single ZnO microrod M-S-M structure with Ag Schottky contact
碩士 === 國立成功大學 === 光電科學與工程學系 === 102 === In this article, we fabricated a single ZnO microrod M-S-M structure photodetector with Ag Schottky contact. We demonstrate this phonemona by physical band model. ZnO microrod ultraviolet (UV) photodetector with two-dimensional Schottky barrier, which present...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39953706181153793689 |
| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 102 === In this article, we fabricated a single ZnO microrod M-S-M structure photodetector with Ag Schottky contact. We demonstrate this phonemona by physical band model. ZnO microrod ultraviolet (UV) photodetector with two-dimensional Schottky barrier, which presented a high photocurrent gain of 5.325 under UV illumination with power density 47.5mW/cm. The asymmetric I-V curve was caused by different Schottky barrier at the interface of electrode and ZnO microrod. Under UV light, The I-V curve become more symmetric, the higher the barrier height, the higher the decrease in barrier height. We can control the I-V characteristics of the Zno microrod M-S-M structure by UV light illumination. The reduction of schottky high will also make tunneling current increase exponentially so the pohotreponse of the device in schottky contact is more sensitive than Ohmic contact and high photocurrent gain.
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