Studies on the stability of poly(3-hexylthiophene) based thin film transistors and their applications

• Main Authors: Chia-HsienLin, 林佳賢
• Other Authors: Horng-Long Cheng
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/45331133322381831985

碩士 === 國立成功大學 === 光電科學與工程學系 === 102 === Organic thin film transistors processed on silicon dioxide (SiO2) substrates generally possess unstable electrical characteristics. This study attempted to achieve high performance and stability for regioregular poly(3-hexylthiophene) (rr-P3HT) thin film transistors (TFTs). The electrical performance of the rr-P3HT-based TFTs was significantly improved by optimizing the fabrication process of the rr-P3HT active layer and the poly(methyl methacrylate) (PMMA) gate dielectric buffer layer. The on/off ratio reached 105, the subthreshold swing was as low as ~1 V/dec, and the hole mobility was 3 × 10−2 cm2/Vs. Capacitance analysis revealed the significant dipole effects of the interface between the rr-P3HT and the PMMA. This result provides a reasonable explanation for the improved operational stability of the rr-P3HT-based TFTs.