| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 102 === Nano-stencil lithography (NSL) is a nanofabrication method that utilizes nanoscale openings on a thin membrane as stencils to fabricate large-scale nanostructures with low fabrication cost. The design flexibility and the high fabrication throughputs have enabled this technique to be suitable for industrial applications. Therefore, the developments of NSL are detailed discussed in this thesis, which consists with two separated topics. First, we will introduce how to fabricate the nanoscale stencils using conventional ultraviolet photolithography. By carefully design the mask patterns for photolithography, we can fabricate nano-slits by using rectangular pattern with width of several microns on a silicon-on-insulator wafer. The nominal length and width of the nano-slits are 25 to 45 micron and 0.8 to 1 micron, respectively. The minimum width we can fabricate is around 200nm.
In the second part of the thesis, we will demonstrate how to successfully fabricate precise nanostructures using NSL. By using the fabricated nano-stencil discussed in the first part of the thesis, we have successfully fabricated metal nano-wires with nominal length and width of 30 to 50 micron and 1 to 1.2 micron, respectively. The minimum width of the nanowire is around 270 nm. Because these nano-stencils are fabricated with micron-thick device layer of a SOI wafer, they are strong enough to withstand wet metal etch. Therefore, they can be re-used for at least 5 times. We also successfully transferred these metal nanowires into semiconductor nanowire field-effect transistors and tested their electrical properties. In addition, we also demonstrated the fabrication of nano-disk arrays using the nano-stencil prepared by Nanospherical-Lens Lithography that is developed in our research group.
In summary, the fabrications of nano-stencils and nanostructures using Nano-stencil Lithography are detailed discussed in this thesis. We firmly believe these developments will lead to industrial applications in the near futures.
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