| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 102 === SUMMARY
In this study, we propose an novel electrodeosition approach to deposit CuZnSn (CZT) films and optimize the quality of CZT films. Cu2ZnSnS4 thin film were deposited by two-step electroplating and annealed under sulfurization at 550℃ for 550 torr. Solar cells with the structure SLG/Mo/CZTS/CdS/ZnO/ITO/Al were fabricated by two-step electroplating. The best cell exhibited the conversion efficiency of 0.796%.
INTRODUCTION
Cu2ZnSnS4(CZTS) are one of the most promising materials for thin-film solar due to their abundant materials, low-cost, non-toxic, suitable direct band-gap energy of 1.45-1.5eV, and high optical absorption coefficients( over 104cm-1).
Electrodeposited approach is known as low-cost, non-vacuum and high throughput. Scragg et al. reported on CZTS solar cell prepared by subsequent electrodeposition of metallic precursors in the order Cu/Sn/Cu/Zn, annealed in an atmosphere containing Sulphur. The resulting film exhibited more uniform and highly large grains, leading to reduce grain boundary and recombination. The best photovoltaic device was 3.2%. Ahmed et al. prepared CZTS by electrodeposition of Cu/Zn/Sn metal stacks, annealed in a Sulfur atmosphere. A marked photovoltaic efficiency was 7.3%.
In this study, we propose a novel electrodeosition approach to deposit CZT films and optimize the quality of CZT films. Cu2ZnSnS4 thin film were deposited by two-step electroplating. Every layer of Films was first deposited by the first step with potentiostat electroplating, which was transferred to deposit by the second step electroplating with voltage pluse electroplate. The goal is to control thickness of films at first step, subsequently, and improve the surface of films.
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