Effect of Alumina Substrate Pretreatment on the Characteristics of NiCrSi Thin Film Resistor

• Main Authors: FrancoJap, 葉淳
• Other Authors: Wen-Hsi Lee
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/66339546826965752778

碩士 === 國立成功大學 === 電機工程學系 === 102 === This research is about finding the best condition of Ni-Cr-Si thin film on two kinds of alumina substrate (Leatec and Ceramtec). Because the general alumina substrate’s surface roughness is very high, this study intends to find the best condition of aluminum oxide thin film as it was found to have a profound effect to amend its surface roughness. Examination on the changes in electrical properties of Ni-Cr-Si thin films at different sputtering power and different thin film thickness were done to identify the relationship between untreated and pretreated alumina substrate to Ni-Cr-Si films. In the experiment of Ni-Cr-Si thin film can be found with the increase of sputtering power, its thickness will also increase, in the other hand, increase of film thickness will result in the decrease in resistance. Increase in annealing temperature will make resistance also increases, while the resistance of DC 5W-20minutes is much higher than RF 40W-30minutes. The increase in annealing temperature will makes TCR to go towards positive trends, with the conditions of RF 40W-30 minutes, annealing temperature 350 ℃ and annealing time 4 hours as the best condition for stable TCR, Leatec substrate that has been coated with Ni-Cr-Si thin film has better electrical properties, its value is 7 ppm/℃. Aluminum thin film at Ar/O2 flow rate of 55/5 sccm, unannealed, has the best surface energy at 41 J/m2. Through AFM can be found that with the increase of aluminum oxide film thickness, surface roughness of the alumina substrate will decrease. Alumina substrate with higher surface energy will result in more difficult dep osition of thin film. Using alumina substrate (Leatec) that has been coated with aluminum oxide film to be deposited to Ni-Cr-Si film can effectively reduce the resistance distribution.