Fabrication and Characterization of Amorphous InGaZnO Thin-Film and Metal-Base Transistors
博士 === 國立成功大學 === 微電子工程研究所 === 102 === Researches on Oxide-semiconductor-based thin-film transistors (TFTs) have advanced remarkably in recent years. Commercial display products using indium gallium zinc oxide (InGaZnO) active arrays have also been successfully demonstrated. It is highly expected th...
Main Authors: | Hau-YuanHuang, 黃晧源 |
---|---|
Other Authors: | Shui-Jinn Wang |
Format: | Others |
Language: | en_US |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/4jk8q4 |
Similar Items
-
The Fabrication and Characterization of InGaZnO Thin-FilmTransistors Using HfSiO High-k Gate Dielectrics
by: Hau-YuanHuang, et al.
Published: (2010) -
Transparent thin film transistors fabricated by amorphous InGaZnO4 thin films
by: Wen-Yuan Ma, et al.
Published: (2006) -
Interface Improvement Thin-Film Transistors with Amorphous Mg-InGaZnO/InGaZnO AP-PECVD Fabricated Channel Structure
by: Kuo, Jui-Lin, et al.
Published: (2019) -
Amorphous InGaZnO Thin-Film Transistors with Vertical Channel Structure
by: Chuang, Kang-Ju, et al.
Published: (2016) -
Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors
by: Chia-Chun Yen, et al.
Published: (2020-01-01)