Breakdown Voltage and Reliability Studies of Devices in NAND Flash Memory Periphery Circuitry
碩士 === 國立成功大學 === 微電子工程研究所 === 102 === In this thesis, we study the high-voltage device which is depletion-mode lateral diffused metal-oxide-semiconductor (LDMOS). The HV device in the periphery circuit is applied to NAND Flash Cell for Program/Erase operation. In periphery circuit, the high...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58759552904041180838 |