The Development of Fringed Micelle in Hypoeutectic Mixture Composed of Hexamethylbenzene and Comb-like Polythiophenes

• Main Authors: Chieh-NanLai, 賴潔男
• Other Authors: Jr-Jeng Ruan
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/7s4h24

碩士 === 國立成功大學 === 材料科學及工程學系 === 102 === Poly(3-alkylthiophenes) (P3ATs) have been widely investigated due to their excellent environmental stability, good processability, and promising electro-optical properties arising from an enhanced crystalline microstructure. However, the electrical conductivity of P3AT can be severely manipulated by molecular organization. Therefore it is needed to explore an effective way to adjust the orientation of P3AT organization for the use within selected devices. In previous research, we successfully adjust the orientation of P3AT epitaxial organization via varying the degree of undercooling of eutectic systems of poly(3-alkylthiophenes) (P3ATs) and hexamethylbenzene (HMB). Based on this result, prior formation of fringed micelle is derived. In this research we further explored various influential factors on the epitaxial organization of P3AT in order to decipher the proposed role of fringed micelle. The exploration of concentration effect has illustrated that as the concentration of studied P3AT is below a certain limit, only Edge-on organization of P3AT can be formed, indicating the impact of critical micelle concentration (CMC). Taking this fact into consideration, we further identified the effect of crystallization tendency and crystal growth rate. It was recognized that Face-on organization is preferred when crystallization tendency is low or crystal growth rate is slow, in these cases the growth of stable crystalline form is less efficient. In contrast, while crystalline form of P3AT is able to develop efficiently within binary mixture, the growth of Edge-on organization is dominative. Hence this research has illustrated a possible mechanism of manipulating the epitaxial organization of P3AT toward the need of device performance.