Nitrided TiO2 as Charge Trapping Layer for Nonvolatile Memory Devices
碩士 === 國立成功大學 === 材料科學及工程學系 === 102 === Abstract Flash memories using poly-silicon as charge storage layers are the mainstream of conventional nonvolatile memories (NVM). However, flash memories face the difficulty in continued dimension down-scaling because of sidnificant charge losses through the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/73puet |