High Energy Density of Supercapacitor Based on N-doped Graphene

• Main Authors: Fitri Nur IndahSari, 蘇費翠
• Other Authors: Jyh-Ming Ting
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/96546043516759362100

碩士 === 國立成功大學 === 材料科學及工程學系 === 102 === This study has been focused on the development of high energy density of nitrogen-doped graphene (NDG)-based supercapacitor via optimizing the specific capacitance and potential window. Doping and reduction of graphene have been done simultaneously by facile and efficient method, microwave-assisted hydrothermal (MHT). The structural analysis, chemical analysis and capacitive behavior have been discussed in detailed. The desirable N-dopant within graphene lattice could be tuned by controlling the temperature and time of MHT. The presence of the N-dopant and remaining of oxygen-functional groups could be enhanced the double layer capacitance higher than reduced graphene oxide (RGO). Therefore, the Csp value from NDG is around two times larger than RGO. NDG also has excellent performance of supercapacitor by showing the high electrical conductivity that was shown from EIS analysis with small value of equivalent series resistance (ESR), good ionic diffusion, and good charge transfer (small contact resistance). This study also demonstrated an asymmetric supercapacitor by utilizing the NDG as anode and SnO2-RGO as cathode in 2 M H2SO4 aqueous electrolyte. Generally, the asymmetric supercapacitor showed higher energy density compares with symmetric supercapacitor.