Improvement of internal quantum efficiency for InGaN/GaN multiple quantum wells based light-emitting diodes

• Main Authors: Cheng-HsuehLu, 呂政學
• Other Authors: Chuan-Pu Liu
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/aj6c5u

博士 === 國立成功大學 === 材料科學及工程學系 === 102 === This research is focused on light emission efficiency enhancement of InGaN/GaN multiple quantum wells (MQWs) based blue or green light-emitting diodes (LEDs), which were grown by metalorganic chemical vapor deposition (MOCVD). With respect to the major manufacturing procedures of the LEDs from epitaxial growth of MQWs, wafer fabrication to chip fabrication, the corresponding methods are proposed and demonstrated to improve internal quantum efficiency (IQE) for better lighting performance. The main techniques and concepts include (1) fabrication of high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN QWs, (2) surface plasmon (SP) resonance coupling with excitons in the QWs, and (3) compensation of quantum confined Stark effect (QCSE) by external stress. The achievements proposed in this research provide effective schemes to improve the IQE for the InGaN/GaN MQWs based LEDs.