Ab-initio Study of Gd2O3 Heteroepitaxy on Si
碩士 === 國立中興大學 === 精密工程學系所 === 102 === This thesis calculates the interface energy of the bixbite Gd2O3 heterogeneous epitaxial growth on the diamond-structure silicon by utilizing first-principles within density-functional theory. Moreover, the atomic arrangement at the interface of Gd2O3(111)/Si(11...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08022731309531219355 |