InGaN optoelectronic devices with a Ga2O3 current confinement structure
碩士 === 國立中興大學 === 材料科學與工程學系所 === 102 === In this thesis, current confinement effect of InGaN light emitting diode structure was demonstrated by forming an insulated GaOx structure surrounding an aperture region. Fabrication processes consisted of a laser scribing process, a electrochemical (EC) wet-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bk7dh2 |