InGaN optoelectronic devices with a Ga2O3 current confinement structure

• Main Authors: Wen-Che Lee, 李文哲
• Other Authors: 林佳鋒
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/bk7dh2

碩士 === 國立中興大學 === 材料科學與工程學系所 === 102 === In this thesis, current confinement effect of InGaN light emitting diode structure was demonstrated by forming an insulated GaOx structure surrounding an aperture region. Fabrication processes consisted of a laser scribing process, a electrochemical (EC) wet-etching process, a photoelectrochemical oxidation (ECO) process, and a thermal oxidization process on the treated sacrificial n+-GaN:Si layer. The dimensions of the LED chips were 40x40µm2 in size, and the mesa regions were defined by using 355nm pulse laser. The laser-scribing depth at the intersection region was 0.6µm that contact with the n+-GaN:Si sacrificial layer for the following EC-etching process to form nanoporous structure and oxidation processes. The sacrificial n+-GaN:Si layer was transformed into a GaOx insulator layer. EC-LED was fabricated by laser scribing system and selective lateral etching technology. At 0.1 mA operating current, the light output power of the EC-LED structure had 2.82 times enhancement that compared with the ST-LED. The high light scattering process was occurred at the embedded nanoporous GaN structure in the EC-LED. EC-LED structure was fabricated by using EC-LED structure through the photoelectrochemical oxidation process and the thermal oxidization process. At 0.1 mA operating current, the light output power had 1.45 times enhancement for the ECO-LED compared to the ST-LED. High light intensity profiles of the ECO-LED were observed at the central mesa region. InGaN LED with embedded GaOx confine aperture structure acted a current confinement structure and a light scattering structure that has potential on the current confinement for vertical cavity surface emitting laser applications.