| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系所 === 102 === This study investigates the effect of ammonia/eth ylene
(NH3 /C2 H4 )mixtures on characteristics of nitrogen-doped amorphous hydrogenated carbon a-C:N films prepared by plasma enhanced chemical vapor deposition. The a-C:N films with identical thickness are deposited on p-type silicon (p-Si) substrates using different NH 3 /C2 H4 ratios. The microstructures, optical, and electrical properties of a-C:N films are evaluated.
Furthermore, current density-voltage and capacitance density-voltage behaviors of a-C:N/p-Si devices are investigated. Experimental results indicate that as the NH 3 /C2 H4 ratio increases from 0 to 20, the nitrogen/carbon ratio increases from 0 to 31.7%. The nitrogen-carbon, nitrogen-hydrogen bonds, sp 2 carbon fraction, and dielectric constant of carbon films enlarge with increasing NH 3 /C2 H4 ratio, while the deposition rate, optical band gap, and resistivity of carbon films decrease. The
a:C:N/p-Si device has an optimum electrical property at the NH3 /CH4 ratio of 5 with ideality factor of 1.5 .
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