The Investigation of Electrical and Optical Properties of Al-doped ZnO Thin Films by Reactive Pulse-DC Magnetron Sputtering In C2H2 Reactive Gas

• Main Authors: Chih-Chiang Wang, 王治強
• Other Authors: Han-Chang Shih
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/07386417229276649030

碩士 === 國立中興大學 === 材料科學與工程學系所 === 102 === In this study, the Al-doped ZnO transparent conductive thin film was deposited on glasses by reactive pulse-DC magnetron sputtering. The substrate was heated up to a high temperature range between 230 to 250 degrees during the sputtering process. During the sputtering process, AC bias added to the substrate, and pass into the reactive gas–C2H2–to deposit the AZO thin film. There were four different reactive gas fluxes that flux into the sputtering chamber such as 0,1,3,and 5sccm. The results of this study will discuss about that if the C2H2 would affect the optical and electrical properties of the AZO thin film. Optical transmittance measurement in wavelengths 350-800nm at room temperature were carried out by a UV-Vis spectrophotometer (Hitachi U3010). The sheet resistance was measured by four-point probe method (everbeing SR-4). The charge carrier mobility, electrical resistivity and carrier concentration were evaluated by Hall-effect (EGK corporation HEM-2000). Raman spectroscope(3D nanometer scale raman PL microspectrometer)detected the graphite formed within the AZO thin film. The structural property was determined by x-ray diffraction (mac science (Brukers) MXP-III). Surface, cross-sectional microstructure and film thickness were examined using field-emission scanning electron (JEOL JSM-6700F). The film’s topographic images were obtained by an atomic force microscope (Bruker dimension Icon). The elemental composition and the chemical bonding in the samples were analyzed using electron spectroscope for chemical analysis (ULVAC-PHI PHI 5000 versaprobe / scanning ESCA microprobe). The surface bonding structure and optical properties of the AZO thin film were measured by photoluminescence spectroscopy (iHR-320).The results were that if the film thickness were 159 nm and did not flux any reactive gas into the sputtering chamber, the AZO thin film would get the better optical and electrical (Resistivity = 5.58*10-4 ohm-cm, Average T% from 350-800 nm=85.945%). But the optical and electrical properties will decrease if the reactive gas flow increase. The XRD pattern show that when the peak intensity of (103) was higher than (002), the AZO thin film would have the better optoelectronic properties.