Preparation of Thin Film Crystalline Siby Metal Induced Crystallization and PossibilityStudy for Solar Cell Application
碩士 === 國立中興大學 === 光電工程研究所 === 102 === In this work, we investigate the influence of seed layer which is made by means of aluminum induced crystallization on effect of crystalline fraction, and the solar cell’s efficiency. The Si in the PIN solar cell on seed layer was expected to have...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95152185146041113172 |
| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 102 === In this work, we investigate the influence of seed layer which is made by means of aluminum induced crystallization on effect of crystalline fraction, and
the solar cell’s efficiency. The Si in the PIN solar cell on seed layer was expected to have higher crystalline fraction that will alleviate Stabler-Wronski
effect in a thin film Si solar cell.
The seed layer was made by aluminum induced crystallization. In the process of aluminum induced crystallization, an etching solution was used for
removing aluminum from the surface of poly-crystalline silicon which annealed in furnace. Investigate to the influence of annealing temperature and
oxidation duration on seed layer.In this part, using Hall measurements to determine the suitable conditions to make seed layer.The conditions were
annealing temperature 450 ℃and oxidation duration 2 hours.
Following, we deposite p-type and intrinsic silicon on the seed layer by PECVD. And intrinsic silicon obtained 25.69 % of the crystallization fraction
enhancement.Design two structures of solar cell device to investigate the difference and discuss the potential and feasibility of the application to solar
cell by I-V. The efficiency of Structure A solar cell on seed layer was 0.511 % and largest short circuit density was 5.856 mAcm-2.
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