Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method

碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 102 === In semiconductor manufacturing process, the material of heating source is usually made by aluminum metal with anodized surface treatment. However, HF gas that produced in the process will etch the aluminum material to lead to the poor uniformity of...

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Main Authors: Chen, I-Fan, 陳奕帆
Other Authors: Tsai, Cheng- Hsien
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/26221829059023608622
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spelling ndltd-TW-102KUAS10630052016-06-17T04:17:00Z http://ndltd.ncl.edu.tw/handle/26221829059023608622 Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method 以含浸法製備鋁基材表面氟化鋁薄膜之研究 Chen, I-Fan 陳奕帆 碩士 國立高雄應用科技大學 化學工程與材料工程系碩士在職專班 102 In semiconductor manufacturing process, the material of heating source is usually made by aluminum metal with anodized surface treatment. However, HF gas that produced in the process will etch the aluminum material to lead to the poor uniformity of temperature profile and the stability of manufacturing process in the chamber. Hence, in this study, aluminum fluoride (AlF3) thin film is prepared on the surface of aluminum substrate by immersing aluminum substrate into in hydrofluoric acid (HF) solution (mainly in 1%) to elevate the corrosion-proof. The influences of experimental parameters, including the reaction time (TI), immersion times (IT), and cooling rate in annealing process, on the quality of thin film (pore density, surface crack, roughness, film thickness) and the mechanical property (hardness, adhesion force), were discussed. By SEM images, the reaction time will affect the consistency, quality, and thickness of films. The results showed that the well consistency of film can be attained by reacting 60 sec than that of 20 or 180 sec by immersing aluminum material in 1% of HF solution at room temperature. Moreover, the smaller pores could be produced by immersing twice than that of 1 time, while the AlF3 particles will be found when the aluminum material was immersed 3 times, resulting in the poor film quality. In addition, at a lower cooling rate, such as 1℃/min in the annealing process, fewer cracks with a higher film quality could be found. As for in 0.1% of HF solution, hydrogen gas was produced and attached on the film surface, leading to the formation of a large amount of pores than that in 1% of HF. Finally, the most of AlF3 films can be made to reach a good adhesion force: ASTM 5B, while the hardness level is only H level, to be lower than original aluminum material (3H). Tsai, Cheng- Hsien 蔡政賢 2014 學位論文 ; thesis 61 zh-TW
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language zh-TW
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description 碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 102 === In semiconductor manufacturing process, the material of heating source is usually made by aluminum metal with anodized surface treatment. However, HF gas that produced in the process will etch the aluminum material to lead to the poor uniformity of temperature profile and the stability of manufacturing process in the chamber. Hence, in this study, aluminum fluoride (AlF3) thin film is prepared on the surface of aluminum substrate by immersing aluminum substrate into in hydrofluoric acid (HF) solution (mainly in 1%) to elevate the corrosion-proof. The influences of experimental parameters, including the reaction time (TI), immersion times (IT), and cooling rate in annealing process, on the quality of thin film (pore density, surface crack, roughness, film thickness) and the mechanical property (hardness, adhesion force), were discussed. By SEM images, the reaction time will affect the consistency, quality, and thickness of films. The results showed that the well consistency of film can be attained by reacting 60 sec than that of 20 or 180 sec by immersing aluminum material in 1% of HF solution at room temperature. Moreover, the smaller pores could be produced by immersing twice than that of 1 time, while the AlF3 particles will be found when the aluminum material was immersed 3 times, resulting in the poor film quality. In addition, at a lower cooling rate, such as 1℃/min in the annealing process, fewer cracks with a higher film quality could be found. As for in 0.1% of HF solution, hydrogen gas was produced and attached on the film surface, leading to the formation of a large amount of pores than that in 1% of HF. Finally, the most of AlF3 films can be made to reach a good adhesion force: ASTM 5B, while the hardness level is only H level, to be lower than original aluminum material (3H).
author2 Tsai, Cheng- Hsien
author_facet Tsai, Cheng- Hsien
Chen, I-Fan
陳奕帆
author Chen, I-Fan
陳奕帆
spellingShingle Chen, I-Fan
陳奕帆
Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method
author_sort Chen, I-Fan
title Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method
title_short Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method
title_full Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method
title_fullStr Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method
title_full_unstemmed Preparation of Aluminum Fluoride Film on Aluminum Substrate by Immersion Method
title_sort preparation of aluminum fluoride film on aluminum substrate by immersion method
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/26221829059023608622
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