| Summary: | 碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 102 === In semiconductor manufacturing process, the material of heating source is usually made by aluminum metal with anodized surface treatment. However, HF gas that produced in the process will etch the aluminum material to lead to the poor uniformity of temperature profile and the stability of manufacturing process in the chamber. Hence, in this study, aluminum fluoride (AlF3) thin film is prepared on the surface of aluminum substrate by immersing aluminum substrate into in hydrofluoric acid (HF) solution (mainly in 1%) to elevate the corrosion-proof. The influences of experimental parameters, including the reaction time (TI), immersion times (IT), and cooling rate in annealing process, on the quality of thin film (pore density, surface crack, roughness, film thickness) and the mechanical property (hardness, adhesion force), were discussed.
By SEM images, the reaction time will affect the consistency, quality, and thickness of films. The results showed that the well consistency of film can be attained by reacting 60 sec than that of 20 or 180 sec by immersing aluminum material in 1% of HF solution at room temperature. Moreover, the smaller pores could be produced by immersing twice than that of 1 time, while the AlF3 particles will be found when the aluminum material was immersed 3 times, resulting in the poor film quality. In addition, at a lower cooling rate, such as 1℃/min in the annealing process, fewer cracks with a higher film quality could be found. As for in 0.1% of HF solution, hydrogen gas was produced and attached on the film surface, leading to the formation of a large amount of pores than that in 1% of HF. Finally, the most of AlF3 films can be made to reach a good adhesion force: ASTM 5B, while the hardness level is only H level, to be lower than original aluminum material (3H).
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