| Summary: | 碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 102 === In this study, P-type CuFe1-xCrxO2 thin films were prepared and examined. Firstly, sol-gel solutions with different Fe/Cr ratio were prepared and then deposited onto quartz substrates via spin-coating technique. Subsequently, these specimens were annealed at 500oC in air for 1 hr and were post-annealed at 700oC in N2 for 2 hrs. X-ray diffraction pattern showed that CuFe1-xCrxO2 (0≦x≦1) thin film is delafossite with space group R3m . Cr is possibly to be accomdated in CuFeO2 delafossite structure. Lattice parameter “a” changes linearly, which is consistent with literature. As Cr% increase, film surface becomes porous and transmittance increases. Absorption peak gradually changes from 4.5 eV of CuFeO2 to 3.3 eV of CuCrO2. Optical energy gap linearly decreases from 3.2 eV to 3.06 eV. Moreover, as x increase within CuFe1-xCrxO2 ( 0≦x≦0.3 ), mobility rises from 0.45 cm2 / V-s to 52.6 cm2 / V-s and carrier concentration drops from 1.38 x 1018 cm-3 to 6.02 x 1014 cm-3 singnificantly. This makes conductivity decrases from 9.62 x 10-2 S/cm to 2.51 x 10-3 S/cm.
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