The Opt-Electric properties of Ti:GZO thin film on flexible substrate under different annealing temperatures and deposited process
碩士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 102 === This study utilizes DC magnetron sputtering to deposit GZO transparent conductive films and Ti thin films on the same PI(polyimide) flexible substrates, then treats GZO/Ti thin films to conduct different anneal temperatures and times with rapid thermal an...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69632640000549011082 |
| Summary: | 碩士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 102 === This study utilizes DC magnetron sputtering to deposit GZO transparent conductive films and Ti thin films on the same PI(polyimide) flexible substrates, then treats GZO/Ti thin films to conduct different anneal temperatures and times with rapid thermal annealing. Making Ti atoms evenly diffuse and deposit to GZO thin films. Finally, it investigates the characteristics of the annealing process with Ti: GZO thin film.Furthermore,it also investigates the annealing temperature effect influence on the resistivity、optical and surface properties of Ti/GZO transparent conductive film.
The results show that the Ti:GZO film on sputtering power 60W and annealing temperature at 290°C has lowest electrical resistivity (about 1.4203x10-3Ω-cm). However, the nano-mechanic properties of the annealing Ti:GZO thin film also maintains the same strength with the unannealing TiGZO thin film.
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