Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films
碩士 === 崑山科技大學 === 電機工程研究所 === 102 === This work applied one in-line sputtering tool to deposit indium tin oxide (ITO) films.The ITO films were following annealed in vacuum with low-heating rate of 10℃/min or traditional heating rate of 18℃~25℃/min. Structural, electrical and optical properties of IT...
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ndltd-TW-102KSUT04420182016-05-22T04:34:29Z http://ndltd.ncl.edu.tw/handle/24968349805525200763 Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films 低加熱速率退火改善直線式連續濺鍍氧化銦錫薄膜光電特性 Chih-Yi Chien 簡志頤 碩士 崑山科技大學 電機工程研究所 102 This work applied one in-line sputtering tool to deposit indium tin oxide (ITO) films.The ITO films were following annealed in vacuum with low-heating rate of 10℃/min or traditional heating rate of 18℃~25℃/min. Structural, electrical and optical properties of ITO films vacuum annealed with low-heating rate or traditional heating rate were compared. The results indicate electrical and optical properties of ITO films vacuum annealed with low-heating rate are better than those with traditional heating rate. The ITO films vacuum annealed at 500oC with low-heating rate can have electric resistivity of 2.40×10-4Ω-cm and average optical transmittance in visible wavelength region of 93.10%. Shang-Chou Chang 張慎周 2014 學位論文 ; thesis 67 zh-TW |
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碩士 === 崑山科技大學 === 電機工程研究所 === 102 === This work applied one in-line sputtering tool to deposit indium tin oxide (ITO) films.The ITO films were following annealed in vacuum with low-heating rate of 10℃/min or traditional heating rate of 18℃~25℃/min. Structural, electrical and optical properties of ITO films vacuum annealed with low-heating rate or traditional heating rate were compared. The results indicate electrical and optical properties of ITO films vacuum annealed with low-heating rate are better than those with traditional heating rate. The ITO films vacuum annealed at 500oC with low-heating rate can have electric resistivity of 2.40×10-4Ω-cm and average optical transmittance in visible wavelength region of 93.10%.
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author2 |
Shang-Chou Chang |
author_facet |
Shang-Chou Chang Chih-Yi Chien 簡志頤 |
author |
Chih-Yi Chien 簡志頤 |
spellingShingle |
Chih-Yi Chien 簡志頤 Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films |
author_sort |
Chih-Yi Chien |
title |
Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films |
title_short |
Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films |
title_full |
Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films |
title_fullStr |
Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films |
title_full_unstemmed |
Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films |
title_sort |
low-heating-rate annealing in improving electrical and optical properties of in-line sputtered indium tin oxide films |
publishDate |
2014 |
url |
http://ndltd.ncl.edu.tw/handle/24968349805525200763 |
work_keys_str_mv |
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