Low-heating-rate Annealing in Improving Electrical and Optical Properties of In-line Sputtered Indium Tin Oxide films
碩士 === 崑山科技大學 === 電機工程研究所 === 102 === This work applied one in-line sputtering tool to deposit indium tin oxide (ITO) films.The ITO films were following annealed in vacuum with low-heating rate of 10℃/min or traditional heating rate of 18℃～25℃/min. Structural, electrical and optical properties of IT...
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| Format: | Others |
| Language: | zh-TW |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24968349805525200763 |
| Summary: | 碩士 === 崑山科技大學 === 電機工程研究所 === 102 === This work applied one in-line sputtering tool to deposit indium tin oxide (ITO) films.The ITO films were following annealed in vacuum with low-heating rate of 10℃/min or traditional heating rate of 18℃～25℃/min. Structural, electrical and optical properties of ITO films vacuum annealed with low-heating rate or traditional heating rate were compared. The results indicate electrical and optical properties of ITO films vacuum annealed with low-heating rate are better than those with traditional heating rate. The ITO films vacuum annealed at 500oC with low-heating rate can have electric resistivity of 2.40×10-4Ω-cm and average optical transmittance in visible wavelength region of 93.10%.
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