S parameter measurements of coplanar waveguides with various thicknesses of SiO2
碩士 === 義守大學 === 電機工程學系 === 102 === In this study, the SiO2 thin films with different thickness (3μm, 5.303μm and 10.52μm) were deposited onto p-type Si substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The coplanar waveguide was fabricated on composite substrate. The S parameter...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26240513943279098674 |
| Summary: | 碩士 === 義守大學 === 電機工程學系 === 102 === In this study, the SiO2 thin films with different thickness (3μm, 5.303μm and 10.52μm) were deposited onto p-type Si substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The coplanar waveguide was fabricated on composite substrate. The S parameters were measured using on wafer Short-Open-Load-Thru (SOLT) calibration and high frequency probe. The characteristics between thin films and transmission line were analysis.
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